Investigation of reliability issue in tunneling and inter-poly dielectrics in floating gate NAND flash memory cell strings

Recently, random telegraph noise (RTN) caused by electrons capture/emission at traps and the reliability of IPD Layer in NAND flash memory cells become important issues as the size of flash memory cell scales down. In this work, we discuss the position effect of ΔV_th due to RTN and the exact position and energy of trap by considering channel resistances of pass cells. And we also investigate the hysteresis phenomenon and transient current variation due to the traps in the IPD layer.