Performance Evaluation of 10-kV SiC Trench Clustered IGBT

The performance of a 10-kV p-channel trench clustered insulated-gate bipolar transistor (IGBT) in silicon carbide evaluated through extensive 2-D numerical simulations is reported here for the first time. Comparison with an equivalent trench IGBT reveals a reduction in the following: 1) on -state voltage by more than 30%; 2) differential specific on-resistance by 20%; and 3) total ( on-state and turnoff) losses by more than 25%.