A fully integrated Class-E power amplifier in 0.13um CMOS technology

This paper presents a fully integrated differential Class-E power amplifier implemented in 130 nm CMOS process. The series resonant circuit and the reactance provided by inductor for Class-E operation is provided by a single parallel resonant circuit and a capacitor respectively. Driving stage and the output balun is also present on-chip. From a 2.5 V supply and a load of 50 Ω, the output power is greater than 19.5 dBm and the overall PAE including driving stage remains above 43% for the entire band of 1.4 GHz to 1.8 GHz.