Modeling a SCR-based protection structure for RF-ESD co-design simulations

Electrostatic discharge protection is a must in every integrated circuit. At microwave frequencies, the influence the protection devices have over the circuit they protect can significantly impact the functioning of the latter. A model for the SCR (silicon controlled rectifier - one of the most efficient ESD protection devices) and the ESD protection diode was developed. Its purpose is to estimate this influence at frequencies up to 65 GHz. A complex device, the DTSCR (diode triggered SCR) is used to demonstrate the consistency of the SCR and diode models.