Cold (−100°C) carbon co-implantation into high phosphorus doping source/drain extensions for aggressively scaled NFETs

A -100°C carbon co-implantation into phosphorus-doped source/drain extensions has been developed, providing for low junction leakage. NFETs made using cold carbon co-implantation and ultra-low energy phosphorus ion implantation showed high activation (Rs~ 500 ohm/sq) and sub-20 nm depth abrupt N+ junction.