Modeling of the pH-ChemFET response and using Genetic Algorithm as extraction parameters method

This paper deals with the modeling of the temperature behavior of the pH-ChemFET sensor by taking into account the dependence with temperature of the reference electrode, insulator/electrolyte interface, test samples and the semiconductor part of pH-ChemFETs. Thus, the relationship of the dissociation constants Ka, Kb, at the SiO₂/Si₃N₄/electrolyte interface, versus the temperature is simulated and the genetic algorithm is used as method for extraction and optimization of the main parameters of the pH-ChemFETs. The model developed is tested at different temperatures on large pH range, evidencing a good fit between simulation and experimental results.