Dual material gate-graded channel-gate stack (DMG-GC-Stack) surrounding gate MOSFET: Analytical threshold voltage (VTH) and subthreshold swing (S) models

This paper presents an analytical model of surface potential, threshold voltage and subthreshold swing for a new structure of surrounding gate (SG) MOSFET by combining Dual-Gate-Material, Graded-Channel and Gate Stack. By comparison with published results, it is shown that the new MOSFET structure can improve the immunity of CMOS-based devices in the nanoscale regime against short channel effect.