Low-temperature crystallization of amorphous Ge thin films using metal nanoparticles

We have demonstrated low-temperature crystal growth process using Ni ferritins. The grain with the size of 500 nm was obtained when the ferritin concentration of 0.5×10^-4 mg/ml. Owing to Ni nano particles, the Ni contamination in poly-Ge film was reduced compared with the contamination in the poly-Ge film obtained using Ni-pattern MILC process. Therefore, nano particle induced MILC process is promising for realizing poly-Ge TFTs in next generation displays. This study was partially supported by AFOSR/AOARD.