Domain patterning by strongly absorbed UV-light in LiNbO3 crystals

Short-term exposure of the +z face of LiNbO₃ crystals to focused UV-laser light leads to persistent inhibition of ferroelectric domain reversal at the irradiated area, a phenomenon referred to as "poling inhibition". Different types of crystals (stoichiometric, congruent or Mg-doped ones) are exposed, creating the so-called "latent state" and domain growth during subsequent electric-field poling is visualized.