94GHz power-combining power amplifier with +13dBm saturated output power in 65nm CMOS

A power combining power amplifier utilizing cascode topology and transformer-based matching elements is presented in this paper. The amplifier achieves +13 dBm saturated output power at 94 GHz with a standard 1.2 V supply and occupies an active area of only 0.069 mm
²
. Amplifier is implemented in an industrial 65nm CMOS process taking into account reliability issues at high output power level. The amplifier is also ESD-protected at the input and at the output.