Process integration of iALD TaN for advanced Cu interconnects

A high density/low resistivity TaN film grown using ion-induced atomic layer deposition (iALD) has been developed as the metal barrier for nano-scale Cu interconnects. Excellent conformalilty and Cu barrier performance enable the use of thin iALD TaN as the metal barrier. Integration of this film has demonstrated improvement in line and via resistance while maintaining robust electromigration (EM), via stress migration (VSM), and dielectric reliability performance.