Chip Design of an UWB, High Gain and Low Noise Amplifier for Wireless Applications

An ultra-wideband (UWB), high gain and low-noise amplifier (LNA) for wireless applications is presented in this paper. Operating at the frequency band of 0.8-6.0 GHz and fabricated in TSMC 0.18-um technology, the measured results show the gain of 17-19 dB, the noise figure (NF) less than 4.8 dB, the input third-order intercept point (IIP3) of -17 dBm, the reverse isolation less than -25 dB and the power dissipation of 43.2 mW at 1.8 V voltage supply. The chip area including pads is only 1.027mm2.