Charge deposition distributions in targets irradiated by electrons

Charge deposition in targets consisting of materials with atomic numbers from 6 to 92 irradiated by normally impinging broad electron beams with energies from 0.1 to 10 MeV are studied. Using the modification of trajectory rotation method [Nucl. Instr. and Meth. B 108 (1996) 276] for the charge deposition calculations, the data on primary electron charge deposition distributions in target are obtained. An analysis of the mechanism of charge deposition distribution shaping in small-size spatial regions in a target is made. The role of stochastic wandering of electrons near the points where they deposit their charge is discussed for charge deposition near inhomogeneities in a target. In is noted that neglect of the electron stochastic wandering can lead to the artifacts in calculations and erroneous conclusions concerning charge deposition near interfaces in heterogeneous targets.