Design and characterization of a 3D half-bridge semiconductor power module in a DFN3×3 package for DC-DC buck converter application

This paper presents a 30V half-bridge 3D semiconductor power module (SPM) in a DFN3×3 package for DC-DC buck converter applications. The 3D Half-Bridge (HB) SPM is compared with a 2D side-by-side HB SPM through a synchronous buck converter at the test conditions of input voltage Vin=19V, output voltage Vo=1.8V, output current Io=12A, and a switching frequency of 300kHz. Both of the HB SPMs are based on shielded gate trench power MOSFET technologies. The DC-DC results show that the proposed 3D HB SPM has better performance than the 2D HB SPM in three categories: (1) 0.9% higher DC-DC efficiency, (2) 3 °C degree lower junction temperature, and (3) 1.7V lower gate spikes.