300 V Field-MOS FETs for HV-switching IC

We have developed 300 V Field-MOS FETs for High-Voltage switching IC. The breakdown voltages are 410 V/370 V with specific on-resistance of 1845/11000 mΩ·mm² for Field-NMOS/PMOS FETs, respectively. The vertical and lateral electric fields are both optimized to maximize a breakdown voltage at wide range of substrate voltages and minimize a specific on-resistance with a device layout optimization by introducing a Field Pate and a Extended-Drain layer. This technology can apply to 300 V High-Voltage switching IC with a low leak current and a low switching resistance.