Formation of CdTe diode detectors by laser irradiation in water

The method of laser-induced solid phase doping of a thin surface layer of high resistivity CdTe crystals has been developed and M-p-n structured In/CdTe/Au diodes have been fabricated. Semi-insulating p-like CdTe crystals pre-coated with an In dopant film were irradiated with nanosecond laser pulses in water environment that made it possible to introduce and activate In dopant atoms with high concentration and form a steep p-n junction in the surface region of the crystal. Multiple laser irradiation of the samples from the In-coated side increased forward current of the diodes and decreased reverse one. The fabricated diode detectors demonstrate high energy resolution.