Temperature Robust Phase Change Memory Using Quaternary Material System Based on Ga2TeSb7

GaTeSb materials possess excellent phase change properties comparable to conventional GeSbTe-based PCM systems. GaTeSb-based quaternary systems are engineered and evaluated as thin film methodologically using x-ray diffraction, isothermal and non-isothermal calculation of activation energies, differential thermal analysis, followed by device characterization on electrical performances, endurance and retention. Quaternary GaTeSb-based systems are proven to be temperature-robust with fast switching characteristics.