Electrical Performances of Tellurium-Rich GexTe1-x Phase Change Memories

This paper investigates the electrical performance of Tellurium-rich Ge_xTe_1-x (with x = 0.3, 0.4, 0.5) Phase Change Memory (PCM) devices. Analysis performed on lance-type PCM cells showed an increase in threshold voltage and crystallization temperature as the Te content is increased. Furthermore, the current required to program the memory in the high resistive state decreased. The improved stability of amorphous phase in Te-rich materials gives rise to higher data retention in our devices.