1.55 /spl mu/m dual polarization lasers containing tensile and compressive strained quantum wells

We have demonstrated lasing in two polarizations in a InP-InGaAsP strained quantum well laser at 1.55 /spl mu/m and have been able to switch the lasing polarization with change in temperature. The analysis of the lasing behavior of this device aids in the design of polarization insensitive amplifiers and dual polarization-lasers as well as offers insight into the process of carrier capture and leakage in quantum wells.