An accurate Monte Carlo binary collision model for BF/sub 2/ implants into (100) single-crystal silicon

In this paper is reported a physically based Monte Carlo model and simulator for accurate simulation of BF/sub 2/ ion implantation in (100) single-crystal silicon. An improved electronic stopping model and a cumulative damage generation model have been developed and implemented in the simulator. These new physically based models greatly improve the capability for predicting BF/sub 2/ as-implanted profiles. The profile dependence on the implant tilt and rotation angles as well as on the implant dose and energy can be very well predicted over the energy range 15 keV-65 keV.