Dose control of MeV-implantation by photoluminescence heterodyne technique

Phosphorous ions were implanted in Si with energies from 0.3 MeV up to 2 MeV over a wide dose range. The implantation was carried out by use of an EATON NV-GSD/HE high energy implanter. A new nondestructive evaluation technique, the so called Photoluminescence Heterodyne technique (PLH) is applied to measure the damage density-dose correlation.