Bipolar bootstrapped multi-emitter BiCMOS (B/sup 2/M-BiCMOS) logic for low-voltage applications

A new full-swing BiCMOS logic circuits called the bootstrapped multi-emitter BiCMOS (B/sup 2/M-BiCMOS) logic is proposed and analyzed. HSPICE simulations have been performed to compare speed performance of the new BiCMOS logic circuit with those of CMOS, conventional BiCMOS, and Bootstrapped BiCMOS (BS-BiCMOS) logic circuits, in 1 /spl mu/m technology. It has been shown that as compared to BS-BiCMOS (CMOS) logic gate, the new B/sup 2/M-BiCMOS 3-input NAND gate with 2 V supply voltage and 0.5 pF output loading has about 36% (72%) improvement in the propagation delay time whereas the B/sup 2/M-BiCMOS 5- and 7-input NAND gates have 1.84 (2.4) and 2.16 (3.1) times of improvement, respectively. This advantageous performance makes the B/sup 2/M-BiCMOS feasible in many low-voltage BiCMOS applications.