A low loss/highly rugged IGBT-generation based on a self aligned process with double implanted n/n/sup +/-emitter

A new 1200 V-IGBT chip is presented which has an optimized planar cell structure for lowest on-state voltage, but that nevertheless guarantees a very high degree of ruggedness. The key point for these features is a new self aligned process concept with a double implanted submicron emitter structure, which will be the basis also for a lower voltage IGBT (600 V) as well as for high voltage IGBTs (1600 V and higher).