Thermal behaviour of lateral power devices on SOI substrates

Simulated temperature distributions for SOI-structures with various film thicknesses for different operating conditions (on state, turn-off and pulse overload) and different SOI sheet thicknesses (20 /spl mu/m, 5 /spl mu/m) are presented and discussed. The temperature increase was in the range between 5 K and 400 K. The calculated results have been verified experimentally for a fabricated device. An important result is the reduced pulse overload capacity of thin SOI-devices in the 10 /spl mu/s to 100 /spl mu/s range. Consequences for application of SOI-devices are discussed.