Low loss Goubau Line on high-resitivity silicon in the 57–64 GHz band.

Planar Goubau Line (PGL) structures on high resistivity silicon are simulated and measured in the 57-64GHz frequency band. It is shown that the increase of the substrate thickness permits to adapt this line, used at THz frequencies, to this frequency band. Very low losses are attained with a measured average attenuation of 0.064dB/mm on the whole band. Another advantage of the PGL consists in its very simple technological process, as just one level of metallization is necessary. A transition between the PGL and a coplanar waveguide is designed in order to perform on-wafer measurements, and very good agreement is obtained with simulation results for the attenuation of PGL.