Modeling and characterization for polarization hysteresis of ferroelectric polymers

We present a modeling and simulation based study for the polarization hysteresis of ferroelectric polymers. A 2-dimensional finite element device-level model was implemented using SILVACO's ATLAS device simulator to generate the polarization hysteresis characteristics for the recently reported experimental data on Au/Poly(vinylidene fluoride-trifluoroethylene)/Au metal-insulator-metal (MIM) device. The simulated polarization dependence characteristics in the P(VDF-TrFE) thin-film were predicted from the parameters coercive field, remnant polarization and spontaneous polarization which were extracted from fitting to the experimental characteristics. The mathematical model which is referred by SILVACO for ATLAS's ferroelectric model was implemented in MATLAB to generate the hysteresis curve. Landau-Devonshire expression for electric field in terms of polarization is also implemented in the MATLAB to produce the polarization hysteresis curve of mono-crystalline and polycrystalline ferroelectrics. The polarization hysteresis characteristics obtained from the ATLAS and MATLAB simulations were in good agreement with the reported experimental hysteresis characteristics.