Fermi-dirac analysis and simulation of an Organic Schottky Diode

Based on the numerical model and the analytical expression developed in our previous work, the location of Fermi level in an organic semiconductor is determined using charge neutrality principle. As in our previous work, a pentacene based Organic Schottky diode is considered for the simulation and comparison of the various physical and electrical properties with the reported experimental results. At first, the consistency checks between the two values of free carriers (holes) is performed, one using our own numerical model and the other using the well known Physics equation. Secondly, the same model is used in the charge neutrality principle to extract the Fermi level energy. This value of Fermi level energy is further applied to calculate the charge ratio and the number of ionized trapped charges. The density of ionized trapped charge is found to be 9.9425×10¹⁵cm^-3, which is in close agreement with the experimental value. Finally, these parameters are used to simulate the I-V characteristics of the above mentioned device through Matlab and Silvaco International's ATLAS simulation software. The simulation results produce an excellent overlapping with the experimental. Besides this, the effect of traps in I-V characteristics of such device is also demonstrated.