Monte Carlo study of the dynamic performance of isolated-gate InAs/AlSb HEMTs

In this work, by means of Monte Carlo simulations, the static and dynamic performance of InAs/AlSb HEMTs at low drain voltages is analyzed. A very good agreement between experimental and simulation results has been obtained not only for the static behavior, but also for small signal equivalent circuit parameters like C_gs, C_gd, f_t and f_c. Problems arise when trying to reproduce the values of g_d and C_ds due to the experimental frequency dispersion, leading also to discrepancies in the values obtained for the intrinsic g_m and also f_max.