Power-law logistic model for the current-time characteristic of metal gate/high-K/III-V semiconductor capacitors

This paper deals with the leakage current variation occurring in Al/HfYO_x/GaAs capacitors subjected to constant electrical stress. It is shown that the current-time characteristic of such structures follows a power-law logistic model that arises from an extension of the Curie-von Schweidler law. The proposed model is based on an equivalent electrical circuit representation of the degraded structure in which series and parallel resistances play a fundamental role.