Toward THz Gunn oscillations in planar GaN nanodiodes

By means of Monte Carlo simulations we show the feasibility of asymmetric nonlinear planar GaN nanodiodes for the development of high-frequency Gunn oscillations. For channel lengths of 1 μm, oscillation frequencies around 300 GHz are predicted, reaching more than 650 GHz for 0.4 μm. The intrinsic DC to AC conversion efficiency is found to be higher than 1% for the fundamental and second harmonic frequencies.