Lower submicron FCBiMOS (fully complementary BiMOS) process with RTP and MeV implanted 5 GHz vertical PNP transistor

A method of high-performance and simple fully complementary bipolar MOS (FCBiMOS) process integration is proposed that is compatible with a conventional 0.5-μm CMOS and BiCMOS process. This process is based on two key technologies. One is a high-dose boron MeV ion implantation combined with an epitaxial wafer. The other is rapid thermal processing (RTP) for high current gain. It has been confirmed that use of a oxygen-free epitaxial wafer solves the problem of MeV ion implantation for a device application with the residual secondary defects. As a result, a pnp transistor with a cut-off frequency of 5 GHz and a current gain of 85 was achieved without any tradeoff of other device characteristics