Wafer-scale production of LEDs via wafer-bonding: achievements and challenges

Advances in AlGaInP LEDs have been enabled by the development of two key technologies: metalorganic chemical vapor deposition (MOCVD) epitaxial growth and compound semiconductor wafer bonding. This talk describes the development of compound semiconductor wafer bonding techniques which have been instrumental in the development and subsequent production of transparent-substrate (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P/GaP LEDs. Furthermore, future challenges for the development of high-efficiency wafer-bonded visible LEDs are elucidated.