Selective area bandgap control during MBE growth of InGaAs/InAlAs QWs for optoelectronic device applications

Semiconductor lasers emitting at 1.3 /spl mu/m and 1.55 /spl mu/m wavelengths are of particular interest because of their application in optical fibre communication systems. In this work, we investigate for the first time the process of indium migration during the growth of InGaAs-InAlAs single quantum wells grown by MBE on patterned InP substrates for the fabrication of long wavelength integrated optoelectronic devices.