YAlOx as inter-poly dielectric for improved performance of flash-memory application

Y-doped Al₂O₃ (YAlO_x) with different Y contents is studied as the inter-poly dielectric (IPD) for flash memory application. Comparing to Al₂O₃ and Y₂O₃ films, the optimized YAlO_x shows lower interface-state density, better thermal properties, lower charge-trap density and smaller leakage. Therefore, the optimized YAlO_x is a promising candidate as IPD for flash memory.