Ultrahigh on/off -Current Ratio for Resistive Memory Devices With Poly(N-Vinylcarbazole)/Poly(3, 4-Ethylenedioxythiophene)–Poly(Styrenesulfonate) Stacking Bilayer

An ultrahigh ON/OFF-current ratio of 5 × 10⁹ is presented in a resistive memory device using Au nanoparticles (Au NPs)-incorporated poly(N-vinylcarbazole) (PVK) and poly(3, 4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT-PSS) stacking configurations as the active layer and Al as electrodes for nonvolatile-memory application. The investigation also suggests that the enhancement of the ON/OFF-current ratio cannot be achieved by simply increasing the thickness of the PVK: Au NPs layer itself. This PVK:Au-NPs/PEDOT-PSS stacking-bilayer memory device also demonstrates good retention of high ON/OFF-current ratio for at least 2 h and remains programmable at 125°C.