High performance CMOS-compatible super-junction FINFETs for Sub-100V applications

A novel lateral super-junction power FINFET (SJ-FINFET) structure suitable for integration is presented to address the challenges associated with sub-100V applications. The proposed lateral SJ-FINFET structure is compatible with advanced SOI-CMOS and FINFET fabrication technologies. It employs a 3D corrugated MOS channel and alternating n/p drift region pillars to achieve a 30% reduction in specific on-resistance when compared to conventional planar gate SJ-LDMOSFETs.