Prospect of tunneling green transistor for 0.1V CMOS

Well designed tunneling green transistor may enable future VLSIs operating at 0.1V. Sub-60mV/decade characteristics have been convincingly demonstrated on 8″ wafers. Large I
ON
at low V
DD
are possible according to TCAD simulations but awaits verification. V
DD
scaling will greatly benefit from low (effective) band gap energy, which may be provided by type II heterojunctions of Si/Ge or compound semiconductors.