Transfer of physically-based models from process to device simulations: Application to advanced Strained Si/SiGe MOSFETs

Integrated process and device simulations were used to predict sub-45nm Strained-Si/Si_0.8Ge_0.2 device performance. Physically-based process models, generalized from Si to strained-Si and SiGe, describe dopant implantation and diffusion, including amorphization, defect interactions and evolution, as well as dopant-defect interactions. The models are used within a unique simulation tool to reproduce the electrical characteristics of Si/SiGe devices.