Package reliability related to die surface passivation: Characterization through TOF-SIMS analysis and package stressing

In a fast growing semiconductor market, cost reduction has driven towards package miniaturization with increasing die performance. C90, C65 and C45 wafer technologies with smaller bond pad opening and bond pad pitch have emerged. The requirement of such wafer technologies leaves little or no room for minute die top delamination, as it may result in bond ripped off and electrical failure. To prevent die top delamination, one of the very key elements is to ensure an excellent adhesion between die surface and mold compound. Hence, understanding of die surface passivation behavior after plasma treatment prior to molding is very crucial to ensure high performance package reliability.