Power conversion efficiency characteristics of AlGaAs/GaAs based Schottky diode for on-chip rectenna devices in nanosystem

A so-called Intelligent Quantum (IQ) chip [1] has been proposed as the promising electronic device for the ubiquitous network society environments. One of the main components in this IQ chip is wireless power supply generated by rectenna devices. At its simplest, it comprises a Schottky diode and an antenna and converts the RF power it receives at the antenna into dc voltage. In this paper, Schottky diode is designed and fabricated on n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure for possible application as rectenna device to generate those other on-chip nanodevices. As shown in Fig. 1(a), the devices are facilitated with a coplanar waveguide (CPW) structure at the both sides of Schottky and ohmic contacts which possess ground-signal-ground (G-S-G) pad structures. In this preliminary study, the Schottky contact area, A is 20 µm × 20 µm, the lengths of CPW, LCPW is 100 µm and the distance between Schottky-ohmic contacts, ddiode is 40 µm. The processing steps used in the fabrication of Schottky diode are the conventional steps used in standard GaAs processing. The photo of fabricated Schottky diode is shown in Fig. 1(b).