Influence of oxygen flow rate during annealing process of Titanium Dioxide thin films

Titanium Dioxide (TiO₂) thin films have been successfully deposited on glass substrate using sol-gel method. The samples were then annealed in a furnace under different oxygen gas flow rate. Current-Voltage (I-V) measurement, SEM, and UV-Vis characterization are done for all samples. SEM images confirm the nanostructured nature of the thin films. The sample with higher oxygen flow rate shows significant improvement in term of structural and electrical properties.