Electron-beam induced current measurements of diffusion length in Si doped MOCVD grown GaN

This paper reports on the electron-beam induced current (EBIC) measurement of minority carrier diffusion length as a function of electron beam acceleration voltage in Si-doped, MOCVD grown, gallium nitride. The measured diffusion length varied from 160nm at 8kV to 220nm at 15kV. Possible reasons for the observed diffusion length dependence on voltage are discussed.