Influence of sputtering substrate temperature and high temperature annealing methods on the properties of SRO/SiO2 superlattices

P-doped silicon rich oxide (SRO) /silicon dioxide (SiO₂) superlattices, deposited by sputtering method under different substrate temperatures, were treated using conventional furnace annealing or rapid thermal annealing (RTA). Raman and X-ray diffraction (XRD) were used to characterize the samples. Results show larger nanocrystal size is formed by furnace annealing than by RTA. High crystallinity can be achieved by increasing substrate temperature and using furnace annealing.