Reduction of negative differential conductivity effect of AlGaN/GaN HEMTs using gate scaling

Gate characteristic is one of the most important parts for the HEMTs. In this paper the DC and RF performance improvement using gate length scaling has been presented. The results show that reduction of the gate length from 1 μm to 0.15 μm, the current gain cutoff frequency increases from 12 GHz to 56 GHz and power gain cutoff frequency increases from 20.5 GHz to 63 GHz respectively. In this paper we report the first ever simulation based device structure design for reduction of Negative Differential Conductivity (NDC) effect in AlGaN/GaN HEMTs by gate length scaling.