0.3-µm gate-length metamorphic AlInAs/GaInAs HEMTs on Silicon substrates by MOCVD

Fabrication and performance of high-frequency 0.3-μm gate-length depletion-mode metamorphic Al
_0.50
In
_0.50
As/Ga
_0.47
In
_0.53
As high electron mobility transistors (mHEMT) grown by Metalorganic Chemical Vapor Deposition (MOCVD) on n-type silicon substrates is reported. Using a combined optical and e-beam photolithography technology, submicron mHEMT devices on Si have been achieved. A maximum trans-conductance up to 739mS/mm was measured. The unity current gain cut-off frequency (f
_T
) and the maximum oscillation frequency (f
_max
) were 72.4 and 77.3GHz, respectively. An input capacitance to gate-drain feedback capacitance ratio, Cgs/Cgd, of 6.8 and a voltage gain, g
_m
/go, of 6.9 are observed in the device.