Interface states and nc-Si dots induced charging/discharging effects in floating gate MOS structures

Capacitance-voltage (C-V) and frequency dependent conductance-voltage (G-V) measurements have been carried out to investigate the charging and discharging effect induced by interface states and nanocrystalline Si (nc-Si) in floating gate MOS structures. Distinct conductance peaks are observed in the G-V curves for the floating gate with and without nc-Si dots. Based on the calculation of interface states density and charge density, the role of nc-Si and interface states is analyzed in detail.