Cu-based and WOx-based resistive switching memories (ReRAMs) for embedded and stand-alone applications

Two types of ReRAM are investigated. The first is a CB-ReRAM (conducting bridge ReRAM) that uses metallic ions to form the bridge. This type of device is known to be unstable because the conducting bridge tends to self-destruct. By adding a buffer layer between the electrode and the electrolyte, the retention of the Cu-based CB-ReRAM is greatly improved while the superior electrical performance is preserved. The second is a TMO (transition metal oxide) type ReRAM. The WO_X-based TMO ReRAM is very simple and easily integrated, and shows excellent electrical properties for NVM applications. The mechanism of switching and conducting are also investigated in detail.