Study of high-gate-voltage stress using the reverse gated-diode current measurement in LDD n-type and p-type MOSFET's

The reverse generation current under high gate voltage stress condition in LDD MOSFET has been studied. It is found that the generation current peak decreases as the stress time increases. It ascribes to the dominating oxide trapped electrons in n-MOSFET and trapped holes in p-MOSFET which reduce the effective drain bias so that lowering the maximal generation rate. The density of the effective trapped electrons in n-MOSFET and holes in p-MOSFET affecting the effective drain bias are calculated by using our model.