Structural and chemical analysis of self-aligned titanium silicide formed by furnace annealing

In this paper the furnace annealing effects on the titanium silicide formation over a range of temperatures are investigated using physical and chemical measurements. In particular the formation steps and the properties of the interface between TiSi₂ and Si have been characterized by mean of Transmission Electron Microscopy. The experiments have been performed with the final aim to obtain Schottky barrier diodes (SBDs) whose fabrication process is suitable for a production line.