Characterisation of electrical properties of AlGaN/GaN Schottky diode at very high temperature

Recent progress in GaN based high electron mobility transistors (HEMTs) has revealed them to be strong candidates for future high power devices at high frequency operation. In order to extract and utilize the favorable GaN material properties, however, there are still a lot of areas to be investigated. Among them the most important is to develop new processes, structure design and characterization techniques. Determination of the effective Schottky barrier height φb on GaN and related compound semiconductors with higher precision is important for further analysis of new combinations of metals and semiconductors and better understanding of physical behaviour at the interface. In this paper we present the modified method of evaluation of the selected parameters on the AlGaN/GaN heterostructure from the I–V measurement in a wide temperature range.